| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device reducing ON resistance, and its manufacturing method. <P>SOLUTION: On the entire surface of a substrate 1, an epitaxial crystal growth layer 2 is arranged. Inside the epitaxial crystal growth layer 2, a second conductivity type region 3 is arranged in a partial region near the surface. Inside the second conductivity type region 3, a first conductivity region 4 is arranged in a partial region near the surface. In the epitaxial crystal growth layer 2, a part of a region where a gate electrode 7 is arranged, becomes a smooth first region where a bunching step is not formed on the surface, and the entire region where the gate electrode 7 is not arranged, becomes a second region where the bunching step is formed on the surface. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
