| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that plasma can not be effectively generated except for the case where pressure is the one higher than the pressure with which the condition is made optimum in a vapor deposition process. SOLUTION: The plasma assisted vapor deposition system comprises: a waveguide allowing microwaves to propagate; a vacuum vessel introducing the microwaves from the waveguide; a dielectric substance clogging the outlet port of the waveguide and separating the space in the vacuum vessel from the space in the waveguide; a microwave horn antenna installed at the tip of the dielectric substance; a first gas pipe installed at the inside of the horn antenna through the side wall of the horn antenna and having a length to resonate with the microwaves; a mechanism introducing a gas from the gas introduction port at the tip of the fist gas pipe into the microwave horn antenna and generating plasma; an evaporation source installed in the vacuum vessel; and a second gas pipe installed between the evaporation source and a base material as the object for vapor deposition. COPYRIGHT: (C)2008,JPO&INPIT
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