| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas phase reaction growth apparatus and a gas phase reaction growth method capable of forming an excellent film by reducing variations in film quality. SOLUTION: A processing apparatus 1 comprises a susceptor 5 as a substrate holding member, a gas supply member 12 as a raw material supply member, a UV lamp 11 as a heating member, and a filter 13 as a wavelength regulating member. The susceptor 5 holds a semiconductor substrate 7. The gas supply member 12 supplies a raw material gas to grow a film on the semiconductor substrate 7 held by the susceptor 5. The UV lamp 11 heats the surface by irradiating the semiconductor substrate 7 held by the susceptor 5 with energy rays (UV rays). The wavelength regulating member (filter 13) regulates the wavelength of the energy rays with which the semiconductor substrate 7 is irradiated. COPYRIGHT: (C)2008,JPO&INPIT
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