发明名称 PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a pattern forming method which prevents ink oozing or traveling to back side by screen printing with a stabilized printed shape, and also a method of manufacturing a semiconductor device using the pattern forming method. SOLUTION: In the pattern forming method and the method of manufacturing a semiconductor device having a source/drain electrode 12, a gate insulated film, an organic semiconductor layer, and a gate electrode laminated in this order on a substrate 11 using the pattern forming method; a liquid repellent layer A<SB>1</SB>is formed on the substrate 11 with a conductive film 12' disposed therebetween, and then a resist ink pattern R<SB>1</SB>' is printed by screen printing to form a resist pattern R<SB>1</SB>on the liquid repellent layer A<SB>1</SB>, and the conductive film 12' is etched with use of the resist pattern R<SB>1</SB>as a mask to form the source/drain electrode 12. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008205144(A) 申请公布日期 2008.09.04
申请号 JP20070038864 申请日期 2007.02.20
申请人 SONY CORP 发明人 KAWASHIMA NORIYUKI;NOMOTO AKIHIRO
分类号 H01L21/3205;H01L21/28;H01L21/288;H01L21/336;H01L29/786;H01L51/05 主分类号 H01L21/3205
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