| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of steps in a fabricating process of a semiconductor device. SOLUTION: A semiconductor device includes on a substrate (10): a first transistor (30) having a first semiconductor layer (1a); and a second transistor (400) having a second semiconductor layer (410), wherein: the first semiconductor layer (1a) has a first channel region (1a'), a first source/drain regions (1d and 1e), and LDD regions (1b and 1c) formed between the first channel region and the first source/drain region; and the second semiconductor layer (410) has a second channel region (410c) that has a conductivity type mutually different from that of the first channel region, and second source/drain regions (410s, 410d) adjacent to the second channel region. Moreover, the second source/drain regions are doped with the same kind of impurity as the impurity that is contained at predetermined concentration in the LDD regions in the first semiconductor layer, at a concentration at least equal to the predetermined concentration. COPYRIGHT: (C)2008,JPO&INPIT |
