| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor fabrication apparatus by which time for the growth of an epitaxial layer to complete is reduced and types of epitaxial layers to be grown on a substrate can be selectively grown. SOLUTION: The semiconductor fabrication apparatus 1 is provided with a reactor 3 to which material gas is supplied and in which semiconductor films are grown on substrates 9 by using the material gas and a jig 4 for growth which is placed in the reactor 3 and receives the substrates 9 in its receiving holes 10 and holds them. In this case, the jig 4 for growth is provided with shutters 11 for opening and closing the receiving holes 10. COPYRIGHT: (C)2008,JPO&INPIT
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