SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging device for suppressing the deterioration of sensitivity with the miniaturization of a photodiode, while reducing a dark current. SOLUTION: A transfer gate part 16 composed of a gate insulating film 7 and a gate electrode 8 is formed above a charge storage part 3 which is formed by being embedded in a semiconductor substrate 1. A charge detecting part 10 is formed above the charge storage part 3 and on the surface of the semiconductor substrate 1 which is adjacent to one end of the transfer gate part. An embedded insulating film 9 is formed below the charge detecting part 10 and above the charge storage part 3 in the semiconductor substrate 1. The embedded insulating film 9 is formed in the semiconductor substrate 1 by extension to the lower region (a channel region) of the transfer gate part. COPYRIGHT: (C)2008,JPO&INPIT