发明名称 |
Bipolar Resistive Memory Device Having Tunneling Layer |
摘要 |
A nonvolatile memory device includes a semiconductor substrate, a first electrode on the semiconductor substrate, a resistive layer on the first electrode, a second electrode on the resistive layer and at least one tunneling layer interposed between the resistive layer and the first electrode and/or the second electrode. The resistive layer and the tunneling layer may support transition between first and second resistance states responsive to first and second voltages applied across the first and second electrodes. The first and second voltages may have opposite polarities.
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申请公布号 |
US2008211036(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20080037400 |
申请日期 |
2008.02.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
ZHAO JIN SHI;LEE JANG-EUN;BAEK IN-GYU;OH SE-CHUNG;NAM KYUNG-TAE;YIM EUN-KYUNG |
分类号 |
H01L29/8605;H01C1/012 |
主分类号 |
H01L29/8605 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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