| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting semiconductor device capable of suppressing the generation of color shading caused by the orientation of the intensity of incident light of a light-emitting element with a simple structure. <P>SOLUTION: A light-emitting element 3 is arranged in the center of the bottom surface of a package 2 having a truncated cone-shaped concave surface. A side surface reflective phosphor layer 4 is arranged on the truncated cone-shaped concave surface for the purpose of the reflection of light from the light-emitting element 3. In the side surface reflective phosphor layer 4, light of a low light-emitting region 12 discharged from the light-emitting element 3 is converted to white and reflected. Then, the light is ejected outside the layer. The inner surface of a truncated cone-shaped package 2 is sealed with an optical transparent material 6. An upper transparent phosphor layer 5 is formed on a portion included in an intensive light-emitting region 11 on the upper surface opposed to the light-emitting element 3 of the optical transparent material 6. In the upper surface transparent phosphor layer 5, visible light and ultraviolet light of the intensive light-emitting region 11 discharged from the light-emitting element 3 are absorbed, repeatedly reflected, and then converted to white. Then, the light is emitted outside the layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
