摘要 |
PROBLEM TO BE SOLVED: To increase uniformity of a film deposition rate when a plurality of wafers is simultaneously subjected to batch treatment using a film deposition system where film deposition is performed by a supercritical process. SOLUTION: A plurality of compartments each of which stores one wafer 4 is arranged in the vertical direction side by side, and supercritical fluid is introduced into each compartment. Further, each partition partitioning the compartment is provided with a communicating port 5 to make the compartments communicate with each other. Temperature control is performed in such a manner that the atmospheric temperature in each compartment and the surface temperature of the wafer 4 stored in each compartment are made uniform, respectively. Further, the introduction rate of the supercritical fluid to be introduced into each compartment is uniformly arranged. COPYRIGHT: (C)2008,JPO&INPIT |