发明名称 |
Memory Device and Manufacturing Method of the Same |
摘要 |
An easy-to-use and inexpensive memory device is provided while maintaining product specifications and productivity even when a memory is formed on the same substrate as other functional circuits. The memory device of the invention includes a memory cell formed on an insulating surface. The memory cell includes a semiconductor film having two impurity regions, a gate electrode, and two wirings connected to the respective impurity regions. The two wirings are insulated from each other by applying a voltage between the gate electrode and at least one of the two wirings to alter the state of the semiconductor film.
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申请公布号 |
US2008211024(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20060573527 |
申请日期 |
2006.03.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO KIYOSHI;YAMAGUCHI TETSUJI;ASANO ETSUKO;IZUMI KONAMI |
分类号 |
H01L27/12;G11C17/16;H01L21/336;H01L21/77;H01L21/82;H01L21/8246;H01L21/8247;H01L21/84;H01L27/10;H01L27/115;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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