发明名称 Memory Device and Manufacturing Method of the Same
摘要 An easy-to-use and inexpensive memory device is provided while maintaining product specifications and productivity even when a memory is formed on the same substrate as other functional circuits. The memory device of the invention includes a memory cell formed on an insulating surface. The memory cell includes a semiconductor film having two impurity regions, a gate electrode, and two wirings connected to the respective impurity regions. The two wirings are insulated from each other by applying a voltage between the gate electrode and at least one of the two wirings to alter the state of the semiconductor film.
申请公布号 US2008211024(A1) 申请公布日期 2008.09.04
申请号 US20060573527 申请日期 2006.03.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI;YAMAGUCHI TETSUJI;ASANO ETSUKO;IZUMI KONAMI
分类号 H01L27/12;G11C17/16;H01L21/336;H01L21/77;H01L21/82;H01L21/8246;H01L21/8247;H01L21/84;H01L27/10;H01L27/115;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项
地址
您可能感兴趣的专利