| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve non-cyanidation in a process of forming a bump electrode consisting of Ag by a plating method. <P>SOLUTION: A method of fabricating a semiconductor device includes: forming a barrier conductive film 12 consisting of a Ti film and a seed film 13 consisting of a Pd film, on a passivation film 10 including the inside of a contact hole 11 that reaches a p-type diffusion layer 7; thereafter forming a photoresist film 17 on an n-type heavily-doped substrate 1; forming an opening 16 where the seed film 13 is exposed, at the bottom of the photoresist film 17; and depositing an Ag film by the plating method in the opening 16 after the photoresist film 17 is hydrophilized, thereby forming a bump electrode BMP. <P>COPYRIGHT: (C)2008,JPO&INPIT |
