发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a lower stage semiconductor device and a multilayer type semiconductor device easily manufactured, wherein the lower stage semiconductor device having high contact reliability with an upper stage even when connecting terminal height of a semiconductor device mounted on the upper stage is low in stacking semiconductor devices. <P>SOLUTION: A semiconductor device 20 includes a base substrate 1, a semiconductor chip 3 mounted on the base substrate 1 via an adhesive layer 2, a resin layer 6 covering at least a portion of the semiconductor chip 3, and an outer connecting terminal 8 electrically connected to the base substrate 1 via wiring layer 9. The outer connecting terminal 8 is exposed from the resin layer 6 on the same plane with the surface of the resin layer 6. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008205518(A) 申请公布日期 2008.09.04
申请号 JP20080144604 申请日期 2008.06.02
申请人 SHARP CORP 发明人 YANO YUJI;ISHIHARA SEIJI
分类号 H01L21/56;H01L23/28 主分类号 H01L21/56
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