发明名称 METHOD FOR FORMING AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE RECORDING MEDIUM
摘要 <p>Disclosed is a method for forming an amorphous carbon film by using a parallel plate plasma CVD apparatus wherein an upper electrode and a lower electrode are arranged in a processing vessel. This method for forming an amorphous carbon film comprises a step for arranging a substrate on the lower electrode, and a step for depositing amorphous carbon on the substrate and forming a film of amorphous carbon by supplying carbon monoxide and an inert gas into the processing vessel and decomposing carbon monoxide by applying a high-frequency power to at least the upper electrode and producing a plasma. The upper electrode is preferably a carbon electrode.</p>
申请公布号 WO2008105321(A1) 申请公布日期 2008.09.04
申请号 WO2008JP52990 申请日期 2008.02.21
申请人 TOKYO ELECTRON LIMITED;ISHIKAWA, HIRAKU;MURAI, TADAKAZU;MORISAKI, EISUKE 发明人 ISHIKAWA, HIRAKU;MURAI, TADAKAZU;MORISAKI, EISUKE
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
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