发明名称 |
METHOD FOR FORMING AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE RECORDING MEDIUM |
摘要 |
<p>Disclosed is a method for forming an amorphous carbon film by using a parallel plate plasma CVD apparatus wherein an upper electrode and a lower electrode are arranged in a processing vessel. This method for forming an amorphous carbon film comprises a step for arranging a substrate on the lower electrode, and a step for depositing amorphous carbon on the substrate and forming a film of amorphous carbon by supplying carbon monoxide and an inert gas into the processing vessel and decomposing carbon monoxide by applying a high-frequency power to at least the upper electrode and producing a plasma. The upper electrode is preferably a carbon electrode.</p> |
申请公布号 |
WO2008105321(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
WO2008JP52990 |
申请日期 |
2008.02.21 |
申请人 |
TOKYO ELECTRON LIMITED;ISHIKAWA, HIRAKU;MURAI, TADAKAZU;MORISAKI, EISUKE |
发明人 |
ISHIKAWA, HIRAKU;MURAI, TADAKAZU;MORISAKI, EISUKE |
分类号 |
H01L21/205;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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