| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor protection circuit enhancing a degree of freedom in voltage which can be applied to a word line of a memory cell during operation. SOLUTION: A protection circuit is provided on a semiconductor substrate to protect a semiconductor device against a charge flowing into wiring during a manufacturing process of the semiconductor device having the wiring. The protection circuit includes first metal wiring 12 connected with the wiring, a forward diode 202 and a backward diode 203 which are connected in parallel with the wiring, NMIS204 wherein a drain is connected with an output of the forward diode 202, a source is connected with the semiconductor substrate 1, and a gate is connected with the ground via the metal wiring on an upper layer, PMIS205 wherein a drain is connected with an input of the backward diode 203 and a source is connected with the semiconductor substrate 1, a first antenna 206 connected with a gate of the NMIS204, and a second antenna 207 connected with a gate of the PMIS205. COPYRIGHT: (C)2008,JPO&INPIT
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