| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for adjusting a manufacture parameter and adjusting a residual polarization amount in a subsequent process in accordance with a prediction value or a measurement value of the residual polarization amount in a prescribed process in manufacture of a semiconductor device comprising a ferroelectric capacitor part. SOLUTION: The manufacturing method of the semiconductor device has a process for forming a transistor layer part on a semiconductor substrate, and a process for forming the ferroelectric capacitor part C1 comprising a lower electrode 3, a ferroelectric 2 and an upper electrode 1 above the transistor layer part. The process for forming the ferroelectric capacitor part C1 adjusts an area of the upper electrode 1 based on a manufacture parameter of the ferroelectric capacitor part C1, a physical value such as orientation, film thickness and a material component of the lower electrode 3 or the ferroelectric crystal 2, or a film formation condition such as a temperature at the time of film formation and a composition ratio of gas in a semiconductor substrate atmosphere, a heat treatment condition such as a temperature at the time of annealing and a composition ratio of gas in annealing time semiconductor substrate atmosphere and a controlled variable at other manufacture time, for example. COPYRIGHT: (C)2008,JPO&INPIT
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