| 摘要 |
<p>Disclosed is an active matrix substrate having excellent transistor characteristics and high reliability, which can be produced by a simple process. Also disclosed is a method for producing such an active matrix substrate. Specifically disclosed is an active matrix substrate comprising a base and a thin film transistor formed on the base and having an amorphous silicon film. In this active matrix substrate, a silicon oxide layer is arranged on the amorphous silicon film, and an organic protective film is arranged on the silicon oxide layer. Also specifically disclosed is a method for producing such an active matrix substrate, which comprises (1) a step for forming a silicon oxide layer on an amorphous silicon film a by oxidizing the surface of an amorphous silicon film A of a thin film transistor formed on a base, and (2) a step for forming an organic protective film of a radiation-sensitive resin composition on the silicon oxide layer.</p> |
