| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that the manufacturing efficiency of a doped fullerene is low because the bias voltage acts only on a place extremely near a deposition substrate though the doped fullerene is manufactured by impressing bias voltage to the deposition substrate to decelerate an atom to be doped and to accelerate a fullerene ion to increase the interaction between the atom to be doped and the fullerene molecule because the atom to be doped is lighter than the fullerene ion and moves at a high speed in a method of manufacturing the doped fullerene which is a system for forming the doped fullerene by irradiating the substrate with plasma comprising the ion of the atom to be doped and the fullerene ion. SOLUTION: In the apparatus, a grid electrode is arranged on the front face of the deposition substrate in a plasma stream side and the positive or negative bias voltage to the potential of the plasma is applied to the grid electrode corresponding to the polarity of the atom ion to be doped. As a result, a zone where the speed of ion constituting the plasma is controlled is extended to improve the manufacturing efficiency of the doped fullerene. COPYRIGHT: (C)2005,JPO&NCIPI
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