发明名称 |
Thin film transistor, manufacturing method thereof, and semiconductor device |
摘要 |
By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a semiconductor film formed over a substrate with linear laser light, a phase-shift mask in which trenches are formed in a stripe form is used. The stripe-form trenches formed in the phase-shift mask are formed so as to make a nearly perpendicular angle with a major axis direction of the linear laser light. CW laser light is used as the laser light, and a scanning direction of the laser light is nearly parallel to a direction of the stripe-form trenches (grooves). By changing luminance of the laser light periodically in the major axis direction, a crystal nucleation position in a semiconductor that is completely melted can be controlled.
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申请公布号 |
US2008210945(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
US20070896005 |
申请日期 |
2007.08.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI HIDEKAZU |
分类号 |
H01L29/786;H01L21/20;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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