Self aligned method of forming a semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling, and a memory array made thereby,申请号KR20010058313-传众专利搜索

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发明名称	Self aligned method of forming a semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling, and a memory array made thereby
摘要
申请公布号	KR100855885(B1)	申请公布日期	2008.09.03
申请号	KR20010058313	申请日期	2001.09.20
申请人		发明人
分类号	H01L27/115;H01L21/28;H01L21/336;H01L21/8239;H01L21/8247;H01L29/423;H01L29/76;H01L29/788;H01L29/792	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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