| 摘要 |
The invention relates to semiconductor devices, particularly high efficiency Schottky diodes (HED) and rectifier arrangements with said semiconductor devices. The high efficiency Schottky diodes (HED) consist of at least one Schottky diode combined with another semiconductor element, particularly magnetoresistors (TMBS) or pn diodes and have trenches or troughs. Said high efficiency Schottky diodes have no barrier lowering and the overall amount of loss is lower than for conventional diodes, particularly at relatively high temperatures. It is thus possible to construct rectifiers that are particularly suitable for use at high temperatures and which can thus be used in motor vehicle generators without the need for special cooling measures such as cooling bodies. A combination of high efficiency Schottky diodes with other semiconductor elements results in the special embodiment of said rectifiers and enables them to be adapted to specific requirements. |
