| 发明名称 |
METHOD OF FABRICATING AN OXIDE LAYER ON A SILICON CARBIDE LAYER UTILIZING AN ANNEAL IN A HYDROGEN ENVIRONMENT |
| 摘要 |
An insulator is formed in a silicon carbide electronic device by fabricating a nitrided oxide layer on a layer of silicon carbide. The nitrided oxide layer is formed by forming the oxide layer in nitrous oxide at a temperature of at least 1,175°C or annealing an existing oxide layer in nitrous oxide at at least 1200°C. |
| 申请公布号 |
EP1378006(B1) |
申请公布日期 |
2008.09.03 |
| 申请号 |
EP20020733980 |
申请日期 |
2002.04.12 |
| 申请人 |
CREE, INC. |
发明人 |
LIPKIN, LORI, A.;DAS, MRINAL, KANTI |
| 分类号 |
H01L21/316;H01L21/04;H01L21/28;H01L21/314;H01L21/318;H01L29/24;H01L29/78 |
主分类号 |
H01L21/316 |
| 代理机构 |
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