| 摘要 |
A SiC semiconductor device includes: a SiC substrate (1, 31, 61) having a main surface; a channel region (2, 34, 64) on the substrate; first and second impurity regions (4, 5, 36, 37, 66, 67, 73) on upstream and downstream sides of the channel region, respectively; a gate (7, 35, 65) on the channel region through a gate insulating film (6, 38, 68). The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6 x 10 20 cm -3 . The interface provides a channel surface perpendicular to a (0001)-orientation plane.
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