发明名称 Length measurement pattern, semiconductor device, and method of manufacturing a semiconductor device
摘要 A length measurement pattern is used for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist. The length measurement pattern includes a first pattern 16 serving as an object of length measurement in length measurement SEM and a second pattern 17 disposed to be spaced apart from the first pattern 16 and used for positioning and focusing of the length measurement SEM.
申请公布号 US7420190(B2) 申请公布日期 2008.09.02
申请号 US20060356121 申请日期 2006.02.17
申请人 NEC ELECTRONICS CORPORATION 发明人 OKAMURA RYUICHI
分类号 G01N23/00;G03F1/00;G03F1/70;G03F9/00 主分类号 G01N23/00
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