发明名称 |
Length measurement pattern, semiconductor device, and method of manufacturing a semiconductor device |
摘要 |
A length measurement pattern is used for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist. The length measurement pattern includes a first pattern 16 serving as an object of length measurement in length measurement SEM and a second pattern 17 disposed to be spaced apart from the first pattern 16 and used for positioning and focusing of the length measurement SEM.
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申请公布号 |
US7420190(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20060356121 |
申请日期 |
2006.02.17 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
OKAMURA RYUICHI |
分类号 |
G01N23/00;G03F1/00;G03F1/70;G03F9/00 |
主分类号 |
G01N23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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