发明名称 PRESSURE SENSOR
摘要 A pressure sensor is provided to improve hostile-environment resistance by coating semiconductor resistances and sensor gauges with an insulation layer. A pressure sensor comprises a diaphragm(11) formed on a predetermined position of a sensor chip(10) made of a semiconductor, and sensor gauges(210) for differentiating or detecting the pressure formed on the sensor chip including the diaphragm. The sensor gauge includes plural sensor gauges forming a bridge circuit, and is in contact with semiconductor resistances(220). The semiconductor resistances and the sensor gauges are coated with an insulation layer. The number of contact holes(240) extracting an electrode for forming contacts(250) electrically connected to the semiconductor resistances is below the number of the sensor gauges.
申请公布号 KR20080080004(A) 申请公布日期 2008.09.02
申请号 KR20080013360 申请日期 2008.02.14
申请人 YAMATAKE CORPORATION 发明人 TOJO HIROFUMI;YONEDA MASAYUKI;TOKUDA TOMOHISA
分类号 G01L9/04;G01L7/08;G01L9/00 主分类号 G01L9/04
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