| 摘要 |
A method for preparing a trench capacitor structure first forms at least one trench in a substrate, and forms a capacitor structure in the bottom portion of the trench, wherein the capacitor structure includes a buried bottom electrode positioned on a lower outer surface of the trench, a first dielectric layer covering an inner surface of the bottom electrode and a top electrode positioned on the surface of the dielectric layer. Subsequently, a collar insulation layer is formed on the surface of the first dielectric layer above the top electrode, and a first conductive block is then formed in the collar insulation layer. A second conductive block with dopants is formed on the first conductive block, and a thermal treating process is performed to diffuse the dopants from the second conductive block into an upper portion of the semiconductor substrate to form a buried conductive region.
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