SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to prevent generation of a void by performing plural damascene processes to form an isolation layer on an active region of a semiconductor substrate. A first dielectric(104) is formed on an upper substrate of a semiconductor substrate(102). The first dielectric is etched to form a first dielectric pattern so that the semiconductor substrate is exposed. A first silicon layer(110) is formed between the first dielectric patterns. A second dielectric pattern is formed on an upper portion of the first dielectric pattern. A width of the upper portion of the second dielectric pattern is reduced. A second silicon layer(120) is formed between the second dielectric patterns. A thermal process is performed to reduce a width of the second dielectric pattern. The second dielectric is formed with a BPSG(Boro Phospho Silicate Glass) layer or an SOG(Spin On Glass) layer.