发明名称 |
Gated diode nonvolatile memory process |
摘要 |
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Various embodiments may include or exclude a diffusion barrier structure between the diode nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
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申请公布号 |
US7419868(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20070619082 |
申请日期 |
2007.01.02 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
OU TIEN FAN;TSAI WEN JER;LAI ERH-KUN;KAO HSUAN LING |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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