| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent the migration of a seam generated from a polysilicon layer in a thermal process by depositing impurities within an amorphous silicon layer. A method for manufacturing a semiconductor device includes a process for forming a polysilicon layer. In the process for forming a polysilicon layer, an amorphous silicon layer(230) is deposited on a semiconductor substrate(210). High-density impurity ions are implanted by using elements of an eighth group with respect to the amorphous silicon layer. A thermal process for the ion-implanted amorphous silicon layer is performed. The semiconductor substrate includes a groove having a gate forming region. The amorphous silicon layer is an undoped amorphous silicon layer or an amorphous silicon layer doped with an N type impurity.</p> |
