| 摘要 |
<p>A silicon-carbide gas distribution plate and an RF(Radio Frequency) electrode for a plasma etch chamber are provided to improve the capacitive coupling of energy by using a high purity sintered SiC. A shower head for use in a capacitive-coupled plasma chamber includes a bulk layer(255) made of a low resistance material, a CVD(Chemical Vapor Deposition) SiC coating layer(260) provided on a lower surface of the bulk layer, and a plurality of gas injection holes passing through the bulk layer and the CVD SiC coating layer. The bulk layer is made of a graphite, SiC being converted from the graphite, a sintered SiC, or a hot pressed SiC. Each of the gas injection holes includes a first section(262) having a first diameter and passing through the bulk layer to form an extended portion, and a second section(264) having a diameter less than the first diameter and passing from the first section to the CVD SiC coating layer to be extended coaxially.</p> |
