| 摘要 |
A semiconductor device having an elongated electrostatic protection element along a long side of a semiconductor chip is provided to improve the whole tolerance about static electricity in a semiconductor device by removing a tolerance difference about static electricity discharge between output circuits. An output circuit region is shaped in a rectangle form having a long side and a short side. An electrostatic protection device region(4) is formed along the long side of the output circuit region and is shaped in a rectangle form having the same long side as the long side of the output circuit region. The output circuit region includes plural output circuits(1,2). Each of the plural output circuits includes a first channel type transistor formed in a first region and a second channel type transistor formed in a second region. The electrostatic protection region is formed between the first region and the second region.
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