| 摘要 |
A semiconductor memory device is provided to prevent the generation of coupling noise due to a bit line pair connected to an adjacent bit line sense amplifier during sensing operation of a bit line sense amplifier. A plurality of bit line sense amplifiers(70,80) senses and amplifies data loaded on a bit line pair according to a pullup control signal and a pulldown control signal. A shield bit line(SBL) is located among the plurality of bit line sense amplifiers, and is connected to a stage of applying the pulldown control signal. The shield bit line maintains a bit line precharge voltage level in a standby state, and maintains a ground voltage level in an active state. |
