| 摘要 |
#CMT# #/CMT# The method involves depositing a monocrystalline semiconductor material layer on a FET by argon plasma spraying, at a deposition speed that is less than deposited atom homogenizing speed. The semiconductor material layer is removed from zones that are not corresponding to silicon layers (26, 28), by photo etching process. The silicon layers cover a source (14) and drain (16) of the FET. The semiconductor material layer is annealed, where the layer is made of silicon, germanium or combination of silicon germanium. #CMT#USE : #/CMT# Method for fabricating an N type MOSFET e.g. enhanced MOSFET or depletion MOSFET (all claimed). #CMT#ADVANTAGE : #/CMT# The method permits the fabrication of the N type MOSFET with reduced junction resistance, thus improving the performance of the transistor, without degrading the quality of electrical junctions of the transistor. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view of a transistor with raised junctions. 10 : Silicon substrate 12 : Insulating layer 14 : Source 16 : Drain 20 : Gate 22, 24 : Insulating zones 26, 28 : Silicon layers. |
