| 摘要 |
A method for fabricating an image sensor is provided to avoid a position variation of an upper metal interconnection in a patterning process for forming the upper metal interconnection by performing a photolithography process after a step between a pixel part and a peripheral part is reduced by using polymer. An interlayer dielectric(20) including a metal interconnection(30,40) is formed on a semiconductor substrate(10) including a pixel part and a peripheral part. Photodiode patterns(55) having a crystalline structure is formed on the interlayer dielectric to be connected to the metal interconnection of the pixel part, separated from each other by an isolation trench(65). An isolation layer(70) is formed on the interlayer dielectric including the isolation trench and the photodiode pattern, having a via hole(71,72) in a manner that the photodiode pattern and the metal interconnection of the peripheral part are partially exposed. A metal layer is formed on the isolation layer having the via hole. A planarization layer capable of planarizing the pixel part and the peripheral part is formed on the metal layer. The planarization layer and the metal layer are patterned to simultaneously form a first metal layer pattern connected to the photodiode pattern and a second metal layer pattern connected to the metal layer of the peripheral part. The photodiode pattern can have a first height higher than the interlayer dielectric of the peripheral part.
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