METHOD OF FABRICATING THIN FILM TRANSISTOR INCLUDING ALD DEPOSITED PROTECTION LAYER ON THE OXIDE SEMICONDUCTOR

摘要

A method for fabricating a thin film transistor by forming and patterning a protection layer on an oxide semiconductor layer is provided to improve performance of a thin film transistor by protecting an interface between the oxide semiconductor layer and a protective insulating layer. A source/drain electrode(2) is formed on a substrate(1). An oxide semiconductor layer(3) is formed on the substrate including the source/drain electrode. A protective insulating layer(4) for protecting the oxide semiconductor layer is deposited on the oxide semiconductor layer by using ALD(Atomic Layer Deposition) method. The semiconductor layer and the protective insulating layer are patterned simultaneously. A gate insulating layer(5) is formed on the patterned protective insulating layer. A gate electrode(6) is formed on the gate insulating layer.