| 摘要 |
A TFT(Thin Film Transistor) array substrate and a method for manufacturing the same are provided to improve the characteristics of an organic TFT array substrate and to simplify a manufacturing process. A TFT array substrate comprises a gate electrode(124), a gate insulating layer(140), a source electrode(173), a drain electrode(175), and an organic semiconductor(154). The gate insulating layer is formed on the gate electrode. The source electrode and the drain electrode, facing each other, are formed on the gate insulating layer. The organic semiconductor comes into contact with the source electrode and the drain electrode. The difference between the surface contact angle of the gate insulating layer and the surface contact angles of the source and drain electrodes is below 5 degrees. |
