发明名称 INTERNAL VOLTAGE GENERATING CIRCUIT
摘要 An internal voltage generating circuit is provided to generate an internal voltage with a desired level through a reference voltage applied from the outside, by decreasing the level of a reference voltage generated internally or preventing the generated reference voltage from being transmitted. A reference voltage generation part(20) generates a first reference voltage by dividing an internal signal according to resistance ratio controlled in response to a test mode signal. An internal voltage generation part(24) generates an internal voltage by receiving the first reference voltage and a second reference voltage inputted through a pad. The reference voltage generation part includes a voltage trimming part and a buffer part. The voltage trimming part generates a trimming voltage by trimming the internal signal, and controls the level of the trimming voltage in response to a test mode signal. The buffer part generates the first reference voltage by buffering the trimming voltage.
申请公布号 KR100854460(B1) 申请公布日期 2008.08.27
申请号 KR20070019948 申请日期 2007.02.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BYEON, SANG JIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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