发明名称 |
Lag cancellation in CMOS image sensors |
摘要 |
A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.
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申请公布号 |
US7417677(B2) |
申请公布日期 |
2008.08.26 |
申请号 |
US20030636534 |
申请日期 |
2003.08.08 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AGRANOV GENNADIY A.;JERDEV DMITRI |
分类号 |
H04N5/335;H04N3/15;H04N5/217 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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