发明名称 Lag cancellation in CMOS image sensors
摘要 A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.
申请公布号 US7417677(B2) 申请公布日期 2008.08.26
申请号 US20030636534 申请日期 2003.08.08
申请人 MICRON TECHNOLOGY, INC. 发明人 AGRANOV GENNADIY A.;JERDEV DMITRI
分类号 H04N5/335;H04N3/15;H04N5/217 主分类号 H04N5/335
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