| 发明名称 |
Film or layer of semiconducting material, and process for producing the film or layer |
| 摘要 |
SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is <=20 nm in thickness, has an HF density of <=0.1/CM<SUP>2</SUP>, and a surface roughness of 0.2 nm RMS.
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| 申请公布号 |
US7417297(B2) |
申请公布日期 |
2008.08.26 |
| 申请号 |
US20060384887 |
申请日期 |
2006.03.20 |
| 申请人 |
SILTRONIC AG |
发明人 |
MURPHY BRIAN;WAHLICH REINHOLD;SCHMOLKE RUEDIGER;VON AMMON WILFRIED;MORELAND JAMES |
| 分类号 |
H01L29/06;H01L21/02;H01L21/762;H01L27/12 |
主分类号 |
H01L29/06 |
| 代理机构 |
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