| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an AlGaInP-based light-emitting diode which can enhance a luminous efficiency of the AlGaInP-based semiconductor light-emitting diode in a short wavelength area and can improve a degradation of an LED characteristic upon a long-sustained drive. <P>SOLUTION: In the light-emitting diode, a semiconductor light-emitting element has: an n-type cladding layer; a light-emitting layer composed of a quantum well structure; a p-type cladding layer; and further an intermediate layer between the light-emitting layer and the p-type cladding layer. These are formed of a composition formula (Al<SB>X</SB>Ga<SB>1-X</SB>)<SB>Y</SB>In<SB>1-Y</SB>P (0≤X≤1 and 0<Y≤1), and a composition of a barrier layer of the quantum well structure is (Al<SB>X</SB>Ga<SB>1-X</SB>)<SB>Y</SB>In<SB>1-Y</SB>P (0.5<X≤1). <P>COPYRIGHT: (C)2008,JPO&INPIT |
