| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which is hard to cause damage to an interlayer insulating film and also hard to cause absorption of moisture due to release to atmosphere when employing technology for introducing Si to the surface of a copper-contained metal film and nitriding that portion to form CuSiN barrier. <P>SOLUTION: The semiconductor device is manufactured through a process for preparing a semiconductor substrate in such state as a copper-contained metal film is exposed from the surface, a process for purifying the surface of the copper-contained metal film by a radical or thermochemical method, a process for introducing Si to the surface of the copper-contained metal film, and a process for nitriding the portion of the copper-contained metal film where Si has been introduced by radical. The purifying process, Si introducing process, and nitriding process are continuously performed with vacuum state being maintained. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
