发明名称 SUBSTRATE TREATING EQUIPMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide substrate treating equipment which can elevate/lower the treatment temperature of a substrate quickly. <P>SOLUTION: A second process module 50 has a mounting table 51 arranged in a chamber 29 while the mounting table 51 incorporates a jacket 40, a refrigerant inflow chamber 53 and a heat transmission/insulation switching chamber 57. The jacket 40 is arranged on the mounting surface of a wafer W at an upper part in the mounting table 51 and incorporates a gas inflow chamber 52. The gas inflow chamber 52 is connected with a high temperature gas supply section 45 through a gas introduction pipe 42, and the refrigerant inflow chamber 53 is connected with a refrigerant supply section 56 through a refrigerant introduction pipe 54. The heat transmission/insulation switching chamber 57 is arranged between the jacket 40 and the refrigerant inflow chamber 53 and connected with a heat transmission gas supply/exhaust section 59 through a heat transmission gas introduction/delivery pipe 58. The heat transmission gas flows into the heat transmission/insulation switching chamber 57 and is then evacuated. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008192643(A) 申请公布日期 2008.08.21
申请号 JP20070022331 申请日期 2007.01.31
申请人 TOKYO ELECTRON LTD 发明人 HAYASHI DAISUKE;NAGASEKI KAZUYA
分类号 H01L21/3065;H01L21/205;H01L21/683 主分类号 H01L21/3065
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