| 摘要 |
An integrated circuit device includes a first predriver that drives an N-type power MOS transistor of an external driver including the N-type power MOS transistor and a P-type power MOS transistor, a second predriver that drives the P-type power MOS transistor, a low-potential-side power supply pad, a first output pad, a second output pad, and a high-potential-side power supply pad. The low-potential-side power supply pad, the first output pad, the second output pad, and the high-potential-side power supply pad are disposed along a first direction. The first predriver is disposed in a second direction with respect to the low-potential-side power supply pad and the first output pad, the second direction being a direction that is perpendicular to the first direction, and the second predriver is disposed in the second direction with respect to the second output pad and the high-potential-side power supply pad.
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