发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that suppresses light-emission in the lower part near the corner part of a stepped part while being a semiconductor light-emitting element provided with a ridge part and the stepped part. <P>SOLUTION: The semiconductor light-emitting element 1 has a semiconductor layer 11, in which an n-type clad layer 12, a photoactive layer 13, and a p-type clad layer 14 are formed in turn on one main face of an n-type substrate 10, and each p-type cap layer 21-23 formed on the semiconductor layer 11. A first insulating layer 41, a first metal layer 42, a second insulating layer 43, and a second metal layer 44 are further formed respectively in turn on in each prescribed region further on these layers. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008192846(A) 申请公布日期 2008.08.21
申请号 JP20070026004 申请日期 2007.02.05
申请人 HAMAMATSU PHOTONICS KK 发明人 SUZUKI HIDEKI;KAMEI MASAFUMI
分类号 H01L33/14;H01L33/30;H01L33/38;H01L33/40 主分类号 H01L33/14
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