| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-chip pressure welding type semiconductor device to augment allowable electric power capacity of the device by augmenting heat dissipating passage area. SOLUTION: The multi-chip pressure welding type semiconductor device of reverse conducting type includes a plurality of active element chips 201 controlling a current flowing in one direction and a plurality of diode chips 202 passing currents in a reverse direction of the current passing direction of the active element chips, electrode plates of the active element chips and the diode chips welded with pressure from above and below. The diode chips are pressed individually. Cross section area of a first post part 205A of a current passage is larger than that of a second post part 205B where the active element chips are pressed individually, or the area between the posts pressed correspondingly to the diode chips or the active element chips has a shallower depressed part H2 than areas of other modes. COPYRIGHT: (C)2008,JPO&INPIT
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