| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, having a gate electrode of short gate length. SOLUTION: The present invention relates to a manufacturing method for a semiconductor device, which has steps of forming a dummy gate 12 specifying a region for forming a gate electrode 14 on a semiconductor substrate 10, forming a surface film 16 onto the surface of the semiconductor substrate 10 using either a collimate sputter, which is a directive sputter perpendicular to the surface of the semiconductor substrate 10, or a long slow sputter or an ion beam sputter, removing the surface film 16 formed on a sidewall of the dummy gate 12, removing the dummy gate 12, and forming the gate electrode 14, in a region from where the dummy gate 12 on the semiconductor substrate 10 has been removed. COPYRIGHT: (C)2008,JPO&INPIT
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