| 摘要 |
PROBLEM TO BE SOLVED: To expand reading margin by stably applying initial voltage. SOLUTION: The semiconductor memory device is provided with a memory cell MC and bit line sense amplifiers 7B. The bit line sense amplifiers 7B are connected between a differential sense amplifier DAMP, pull-up parts (74P, 75P) of first differential input (input voltage VIN), input voltage VIN, and a sense line (global bit line GBL), and includes a reading gate transistor (75N) which is turned on when a sense line potential is lowered from the initial voltage (bit line voltage VBL) in accordance with a cell current Icell and a threshold correcting part. The threshold correcting part generated voltage corrected from the initial voltage by forming and releasing of diode connection for the prescribed transistor (e.g. 75N etc.) which is desired to exclude influence of threshold voltage for a potential of the sense line, and the corrected voltage is applied to a control terminal of the reading gate transistor (75N). COPYRIGHT: (C)2008,JPO&INPIT
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