发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR WAFER STRUCTURE
摘要 A semiconductor device manufacturing method, includes the steps of forming an insulating film over a semiconductor substrate, thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film, forming contact holes in a thinned portion of the insulating film 25 , and forming conductive plugs in the contact holes.
申请公布号 US2008197506(A1) 申请公布日期 2008.08.21
申请号 US20080034976 申请日期 2008.02.21
申请人 FUJITSU LIMITED 发明人 NAGAI KOUICHI
分类号 H01L23/52;H01L21/4763 主分类号 H01L23/52
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