| 摘要 |
An embodiment provides a light emitting device. The light emitting device includes a light emitting structure which includes a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer; a first electrode which is arranged in a part of the first conductivity type semiconductor layer; an insulating layer of a DBR structure which is arranged on a part of the first electrode, the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer; and a second electrode which is arranged on the second conductivity type semiconductor layer. The first electrode touches the insulating layer on the first surface and is exposed to the second surface facing the first surface. So, an ultra-thin light emitting device having no growth substrate or metal support can be implemented. |
