发明名称 High-power light-emitting diode
摘要 A high-power light-emitting diode comprises a pillar, at least one light-emitting chip, a substrate, at least two conducting wires, and a transparent layer. The pillar has an integrally cast structure. The pillar has a block on which a recessed cup is formed. In addition, a screw bolt is extended from a lower portion of the block. The light-emitting chip is mounted on the inside of the recessed cup formed on the block of the pillar. Two conducting layers are mounted on the substrate. The substrate is located to encircle the recessed cup on the block. The light-emitting chip is connected with the substrate via these two conducting wires. The recessed cup, the light-emitting chip, and the substrate are covered with the transparent layer. Accordingly, the heat energy can be dissipated quickly and the product can be assembled easily.
申请公布号 US2008197374(A1) 申请公布日期 2008.08.21
申请号 US20070706427 申请日期 2007.02.15
申请人 SUNG WEN-KUNG 发明人 SUNG WEN-KUNG
分类号 H01L33/48;H01L33/64 主分类号 H01L33/48
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